Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.
basic_science · Level V
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Abstract
Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187] with a uniform period of 60 nm.
Medical subject headings
- Crystallization
- Germanium
- Nanostructures
- Nanotechnology
- Silicon