Resonant tunneling in nanocolumns improved by quantum collimation.

Wensorra, Jakob; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Förster, Arno; Lüth, Hans · Nano Lett · 2005

basic_science · Level V

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Abstract

We report on a quantum collimation effect based on surface depletion regions in AlAs/GaAs nanocolumns with an embedded resonant tunneling structure. The considered MBE-grown nanodevices have been fabricated by means of a top-down approach that employs a reproducible lithographic definition of the vertical nanocolumns. By analyzing the scaling properties of these nanodevices, we discuss how a collimation effect due to a saddle point in the confining potential can explain an improved device performance of the ultimately scaled structures at room temperature.

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