Aligned carbon nanotube stacks by water-assisted selective etching.

Zhu, Lingbo; Xiu, Yonghao; Hess, Dennis W; Wong, Ching-Ping · Nano Lett · 2005

basic_science · Level V

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Abstract

Well-aligned, high-purity carbon nanotube (CNT) stacks of up to 10 layers fabricated in one batch process have been formed by water-assisted selective etching of carbon atoms. Etching takes place at the CNT caps as well as at the interface between CNTs and metal catalyst particles. This simple process generates high-purity CNTs and opens the CNT ends by removing the nanotube caps. High-resolution transmission electron microscopy indicates that the process does not damage CNT wall structures. A mechanism for stacked growth of CNT layers is proposed.

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