Infrared imaging of the nanometer-thick accumulation layer in organic field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 16464039.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.
Medical subject headings
- Membranes, Artificial
- Nanotechnology
- Spectrophotometry, Infrared
- Thiophenes