Silicon p-FETs from ultrahigh density nanowire arrays.
basic_science · Level V
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- Record sourced from PubMed, PMID 16771560.
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Abstract
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm-3. Top-gated 4-microm-wide Si nanowire p-FETs yielded low off-currents (approximately 10(-12) A), high on/off ratios (10(5)-10(6)), good on current values (30 microA/microm), high mobilities (approximately 100 cm2/V-s), and low subthreshold swing values (approximately 80 mV/decade between 10(-12) and 10(-10) A increasing to 200 mV/decade between 10(-10)-10(-8) A).
Medical subject headings
- Electric Wiring
- Microelectrodes
- Nanotechnology
- Nanotubes
- Silicon
- Transistors, Electronic