Photoluminescence and intrinsic properties of MBE-grown InN nanowires.
basic_science · Level V
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Abstract
The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
Medical subject headings
- Indium
- Luminescence
- Nanostructures
- Nitrogen