Defect distribution along single GaN nanowhiskers.
basic_science · Level V
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Abstract
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
Medical subject headings
- Gallium
- Luminescence
- Nanostructures