Transport phenomena and conduction mechanism of single-walled carbon nanotubes (SWNTs) at Y- and crossed-junctions.

Kim, Do-Hyun; Huang, Jun; Shin, Hoon-Kyu; Roy, Somenath; Choi, Wonbong · Nano Lett · 2006

basic_science · Level V

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Abstract

This letter illustrates the transport phenomena associated with single-walled carbon nanotube (SWNT) junctions of Y- and cross-configurations. Localized gating effect exhibited by Y- and crossed-junctions suggests the resemblance of their electrical characteristics with ambipolar and unipolar p-type FETs, respectively. Temperature dependence of the I-V characteristics reveals that the conduction mechanism in the said SWNT junctions is governed by thermionic emission at temperatures above 100 K and by tunneling at T < 100 K. In-depth analysis of current transport through the crossed- and Y-junction SWNTs is significant in view of their predominant influence on the electrical performance of carbon nanotube networks (CNT-mat).