NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 17163746.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.