Low-frequency noise in nanoscale ballistic transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 17212463.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Low-frequency "1/f" noise is a major issue for nanoscale devices such at carbon nanotube transistors. We show that nanoscale ballistic transistors give voltage-dependent sensitivity to the intrinsic potential fluctuations from nearby charge traps. A distinctive dependence on gate voltage is predicted, without reference to the number of carriers. This dependence is confirmed by comparison with recent measurements of nanotube transistors. Possible ways of decreasing the noise are discussed.
Medical subject headings
- Nanostructures