Magnetically induced field effect in carbon nanotube devices.

Fedorov, Georgy; Tselev, Alexander; Jiménez, David; Latil, Sylvain; Kalugin, Nikolai G; Barbara, Paola; Smirnov, Dmitry; Roche, Stephan · Nano Lett · 2007

basic_science · Level V

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Abstract

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNTs) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from the temperature-dependent magnetoconductance measurements.

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