Electrically excited infrared emission from InN nanowire transistors.
basic_science · Level V
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Abstract
We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.
Medical subject headings
- Electric Wiring
- Indium
- Infrared Rays
- Lighting
- Nanotechnology
- Nanotubes
- Transistors, Electronic