Selective plating for junction delineation in silicon nanowires.
basic_science · Level V
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Abstract
The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.
Medical subject headings
- Crystallization
- Nanostructures
- Nanotechnology
- Semiconductors
- Silicon