Size limits on doping phosphorus into silicon nanocrystals.

Chan, T-L; Tiago, Murilo L; Kaxiras, Efthimios; Chelikowsky, James R · Nano Lett · 2008

basic_science · Level V

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Abstract

We studied the electronic properties of phosphorus-doped silicon nanocrystals using the real-space first-principles pseudopotential method. We simulated nanocrystals with a diameter of up to 6 nm and made a direct comparison with experimental measurement for the first time for these systems. Our calculated size dependence of hyperfine splitting was in excellent agreement with experimental data. We also found a critical nanocrystal size below which we predicted that the dopant will be ejected to the surface.

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