Low-frequency noise in ambipolar carbon nanotube transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 18351749.
- Also identified by DOI 10.1021/nl073140g.
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Abstract
Low-frequency noise measurements on individual single-walled carbon nanotube transistors exhibiting ambipolar characteristics have been carried out. With a polymer electrolyte as gate medium, low-frequency noise can be monitored in both p- and n-channel operation of the same nanotube under the same chemical environment. 1/ f noise in the p-channel of polymer electrolyte gated nanotube transistor is similar to that of back gate operation. However, most devices exhibit significantly larger noise amplitude in the n-channel operation that has a distinct dependence on the threshold voltage. A nonuniform energy distribution of carrier trapping/scattering sites is considered to explain these observations.