Imaging dielectric properties of Si nanowire oxide with conductive atomic force microscopy complemented with femtosecond laser illumination.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 18507478.
- Also identified by DOI 10.1021/nl0807171.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
In most Si nanowire (NW) applications, Si oxide provides insulation or a medium of controlled electron tunneling. This work revealed both similarities and differences in the dielectric properties of NW oxide compared with that grown on wafers. The interface barrier to electron transit from the semiconductor to the dielectric and the threshold electric field for current flow are quite similar to those in the planar geometry. This is not true for the lowest currents measured which are not uniformly distributed, indicating variations of trap density in the gap of NW oxide.