Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 18510368.
- Also identified by DOI 10.1021/nl0800873.
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Abstract
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
Medical subject headings
- Aluminum Compounds
- Gallium
- Luminescence
- Nanowires
- Quantum Dots