Syntaxial growth of Ge/Mn-germanide nanowire heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 18698729.
- Also identified by DOI 10.1021/nl800933s.
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Abstract
We report the growth of free-standing one-dimensional Ge/Mn-germanide nanowire heterostructures by chemical vapor deposition and provide a detailed description of the growth mechanism. Self-assembled manganese-germanide particles seed the growth of Ge nanowires (GeNWs) and simultaneously elongate along a parallel axis, resulting in syntaxial growth of the two phases. The GeNW growth is limited by GeH 4 decomposition, whereas the germanide growth is limited by reaction of Mn at the growth interface. This syntaxial growth mechanism provides a novel route to axial metal/semiconductor nanowire heterostructures.