Minimum voltage for threshold switching in nanoscale phase-change memory.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 18767829.
- Also identified by DOI 10.1021/nl802261s.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The size scaling of the threshold voltage required for the amorphous-to-crystalline transition in phase-change memory (PCM) is investigated using planar devices incorporating individual GeTe and Sb2Te3 nanowires. We show that the scaling law governing threshold switching changes from constant field to constant voltage scaling as the amorphous domain length falls below 10 nm. This crossover is a consequence of the energetic requirement for carrier multiplication through inelastic scattering processes and indicates that the size of PCM bits can be miniaturized to the true nanometer scale.