Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.
basic_science · Level V
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- Record sourced from PubMed, PMID 18842031.
- Also identified by DOI 10.1021/nl802449g.
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Abstract
It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.