Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays.
basic_science · Level V
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- Record sourced from PubMed, PMID 18954126.
- Also identified by DOI 10.1021/nl802408y.
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Abstract
Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.