Atomic hole doping of graphene.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 19053796.
- Also identified by DOI 10.1021/nl802996s.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point is shifted into the unoccupied states. Atomic doping presents excellent perspectives for large scale production.