Stacking-faults-free zinc Blende GaAs nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 19093840.
- Also identified by DOI 10.1021/nl8027872.
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Abstract
Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.
Medical subject headings
- Arsenicals
- Crystallization
- Gallium
- Nanotechnology
- Nanotubes