GaAs core--shell nanowires for photovoltaic applications.
basic_science · Level V
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- Record sourced from PubMed, PMID 19143502.
- Also identified by DOI 10.1021/nl802700u.
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Abstract
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
Medical subject headings
- Arsenicals
- Crystallization
- Electric Power Supplies
- Electrochemistry
- Gallium
- Nanostructures
- Nanotechnology
- Photochemistry