Method for suppression of stacking faults in Wurtzite III-V nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 19253998.
- Also identified by DOI 10.1021/nl803524s.
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Abstract
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.