Charge transport in interpenetrating networks of semiconducting and metallic carbon nanotubes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 19331424.
- Also identified by DOI 10.1021/nl803849e.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN-FETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.