Ionic field effect transistors with sub-10 nm multiple nanopores.

Nam, Sung-Wook; Rooks, Michael J; Kim, Ki-Bum; Rossnagel, Stephen M · Nano Lett · 2009

basic_science · Level V

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Abstract

We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.