Ionic field effect transistors with sub-10 nm multiple nanopores.
basic_science · Level V
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- Record sourced from PubMed, PMID 19397298.
- Also identified by DOI 10.1021/nl900309s.
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Abstract
We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.