Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 19655719.
- Also identified by DOI 10.1021/nl900751g.
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Abstract
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length.
Medical subject headings
- Germanium
- Nanowires
- Silicon