Lithographic graphitic memories.
basic_science · Level V
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- Record sourced from PubMed, PMID 19719147.
- Also identified by DOI 10.1021/nn9006225.
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Abstract
Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes <or=10 nm thick with controllable lengths and widths. These lithographic graphitic stripes, which can be easily fabricated in large quantities in parallel by conventional fabrication techniques (such as CVD and photo- or e-beam lithography), with yields >95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 10(7), switching times down to 1 mus (tested limit), and switching voltages down to 3-4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.