Robust pattern transfer of nanoimprinted features for sub-5-nm fabrication.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 19722536.
- Also identified by DOI 10.1021/nl9018512 and PMC identifier 2761997.
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Abstract
We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitates easy liftoff. An added benefit is a concomitant reduction of feature size. A postliftoff annealing step produces high pattern uniformity and additional feature size reduction. The process is extremely robust, and it enables relatively straightforward fabrication of sub-5-nm spherical structures. It is extendible to rectilinear patterns as well.