Control of spin precession in a spin-injected field effect transistor.
basic_science · Level V
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- Record sourced from PubMed, PMID 19762637.
- Also identified by DOI 10.1126/science.1173667.
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Abstract
Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.