Etching of graphene devices with a helium ion beam.
basic_science · Level V
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- Record sourced from PubMed, PMID 19769403.
- Also identified by DOI 10.1021/nn900744z.
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Abstract
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.