Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 19795838.
- Also identified by DOI 10.1021/nl9018148.
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Abstract
Elastic strain is a critical factor in engineering the electronic behavior of core-shell semiconductor nanowires and provides the driving force for undesirable surface roughening and defect formation. We demonstrate two independent strategies, chlorine surface passivation and growth of nanowires with low-energy sidewall facets, to avoid strain-induced surface roughening that promotes dislocation nucleation in group IV core-shell nanowires. Metastably strained, dislocation-free, core-shell nanowires are obtained, and axial strains are measured and compared to elasticity model predictions.