GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 20377199.
- Also identified by DOI 10.1021/nl9041774.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
Medical subject headings
- Aluminum
- Arsenicals
- Gallium
- Lighting
- Nanostructures
- Nanotechnology
- Semiconductors
- Silicon