Germanium and silicon nanocrystal thin-film field-effect transistors from solution.
basic_science · Level V
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- Record sourced from PubMed, PMID 20533841.
- Also identified by DOI 10.1021/nl101413d.
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Abstract
Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm(2) V(-1) s(-1), respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.