High current, low voltage carbon nanotube enabled vertical organic field effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 20707327.
- Also identified by DOI 10.1021/nl101589x.
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Abstract
State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio >10(5) for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm(2). The architecture enables submicrometer channel lengths while avoiding high-resolution patterning. The ability to drive high currents and inexpensive fabrication may provide the solution for the so-called OLED backplane problem.