Silicon nitride gate dielectrics and band gap engineering in graphene layers.
basic_science · Level V
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- Record sourced from PubMed, PMID 20715804.
- Also identified by DOI 10.1021/nl101832y.
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Abstract
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.