Fiber field-effect device via in situ channel crystallization.

Danto, Sylvain; Sorin, Fabien; Orf, Nicholas D; Wang, Zheng; Speakman, Scott A; Joannopoulos, John D; Fink, Yoel · Adv Mater · 2010

basic_science · Level V

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Abstract

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.

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