Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE).

Park, Jeongho; Mitchel, William C; Grazulis, Lawrence; Smith, Howard E; Eyink, Kurt G; Boeckl, John J; Tomich, David H; Pacley, Shanee D et al. · Adv Mater · 2010

basic_science · Level V

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Abstract

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).

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