Reversible resistive switching and multilevel recording in La0.7Sr0.3MnO3 thin films for low cost nonvolatile memories.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 20836512.
- Also identified by DOI 10.1021/nl1008162.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La(0.7)Sr(0.3)MnO(3) to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.