Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 20945844.
- Also identified by DOI 10.1021/nl1013713.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
Medical subject headings
- Computer Storage Devices
- Nanostructures
- Nanotechnology
- Signal Processing, Computer-Assisted
- Transistors, Electronic
- Zinc Oxide