Structure and elemental distribution of (Ga,Mn)N nanowires.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 21171626.
- Also identified by DOI 10.1021/nl1030002.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply.
Medical subject headings
- Gallium
- Manganese
- Nanotubes
- Nitrogen