Controlled growth of ordered nanopore arrays in GaN.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 21171632.
- Also identified by DOI 10.1021/nl103418q.
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Abstract
High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.
Medical subject headings
- Crystallization
- Gallium
- Nanostructures
- Nanotechnology