Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.
basic_science · Level V
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- Record sourced from PubMed, PMID 21366223.
- Also identified by DOI 10.1021/nl103649d.
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Abstract
We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1 × 10(11) cm(-2) and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C(0), defined as the Auger coefficient at low excitation, are 6.1 × 10(-32) and 4.1 × 10(-33) cm(6)·s(-1) in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm(2).
Medical subject headings
- Lighting
- Nanostructures
- Nitrogen
- Semiconductors