Insulating behavior in ultrathin bismuth selenide field effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 21486055.
- Also identified by DOI 10.1021/nl200017f.
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Abstract
Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.