Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 21574627.
- Also identified by DOI 10.1021/nl200758b.
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Abstract
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Medical subject headings
- Boron Compounds
- Graphite
- Temperature