Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 21591655.
- Also identified by DOI 10.1021/nl200114h.
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Abstract
Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50 cm(2)/(V s), and subthreshold swing of 2.5 V/decade. A 2 in. diagonal 160 × 180 pixel image sensor array was fabricated by integrating the SiNW backplane with an a-Si:H p-i-n photodiode.
Medical subject headings
- Nanotechnology
- Nanowires
- Silicon
- Transistors, Electronic