Wafer-scale strain engineering of ultrathin semiconductor crystalline layers.
basic_science · Level V
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- Record sourced from PubMed, PMID 21769949.
- Also identified by DOI 10.1002/adma.201101309.
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Abstract
The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.