Epitaxial graphene transistors: enhancing performance via hydrogen intercalation.
basic_science · Level V
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- Record sourced from PubMed, PMID 21805993.
- Also identified by DOI 10.1021/nl2019855.
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Abstract
We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm(2)/(V s) to >2000 cm(2)/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.