Optimization of carrier multiplication for more effcient solar cells: the case of Sn quantum dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 21838302.
- Also identified by DOI 10.1021/nn202180u.
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Abstract
We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task.